Mercury's Gallium Nitride (GaN) amplifier products employ the latest semiconductor technologies to present the very best performance to our customers. Gallium Nitride (GaN) technology, coupled with Mercury''s chip and wire die level implementation maximize the high power added efficiency and high power density characteristics of GaN in small convenient packages. Multi-octave amplifiers and application specific narrow band amplifiers cover frequencies to 10.7 GHz. GaN amplifiers operate with voltages between +28VDC to +50VDC (design dependent). Catalog designs offer power levels up to 20 Watts; custom designs to 100 Watts are available. GaN amplifiers are best suited for saturated operation; they are frequently specified at 3dB output power compression. Standard options such as TTL On/Off, Integrated Output Isolator, Over-Temperature Shut-down, Power Detectors at various frequency and gain specifications are available.