Gallium Nitride (GaN)

Mercury's Gallium Nitride (GaN) amplifier products employ the latest semiconductor technologies to present the very best performance to our customers. Gallium Nitride (GaN) technology, coupled with Mercury''s chip and wire die level implementation maximize the high power added efficiency and high power density characteristics of GaN in small convenient packages. Multi-octave amplifiers and application specific narrow band amplifiers cover frequencies to 10.7 GHz. GaN amplifiers operate with voltages between +28VDC to +50VDC (design dependent). Catalog designs offer power levels up to 20 Watts; custom designs to 100 Watts are available. GaN amplifiers are best suited for saturated operation; they are frequently specified at 3dB output power compression. Standard options such as TTL On/Off, Integrated Output Isolator, Over-Temperature Shut-down, Power Detectors at various frequency and gain specifications are available.

Name
AML618L4011
AML1314P4511
AML910P4216
AML910P4214
AML910P4213
AML056P4014
AML218P4012
AML612P4501
AML1416P4511
AML59P4513
AML056P4511
AML910P4215
AML811P5012
AML59P4512
AML618P4015
AML1416P4512
AML618P4014
AML13P5013
AML056P4512
AML1314P4512
AML811P5013
AML218P4013
AML26P4011
AML26P4012
AML26P4013
AML811P5011
AML056P4013

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