Docs & Specs

Data Sheet

Application Note


Model:  W7464M32V1-XSBX
1GB (4x64Mx32) NOR Flash Multi-Chip Package 3V Page Mode Memory

The W7264M32V1-XSBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. The W7464M32V1-XSBX device is a 3V single power flash memory and utilizes eight chips organized as 67,108,864 words. These devices have a 32-bit wide data bus. One write enable per 16-bit data word.

Each device requires a single 3 volt power supply for both read and write functions.


  • Single power supply operation
    • 3 volt read, erase, and program operations
  • I/O Control
    • All input levels (address, control, and DQ input levels) and outputs are determined by voltage on Vio input.
  • Separate 1024-byte One Time Program (OTP) array with two lockable regions
  • Uniform sector architecture
    • One thousand twenty four 128 Kbyte sectors
  • 100,000 erase cycles per sector typical
  • 20-year data retention typical
  • Commercial, industrial and military temperature ranges
  • Organized as 4 ranks of 64M x 32 (1GB)

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