256MByte 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Memory
The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The device has a 32-bit wide data bus and can be user defined as 2 ranks of 64M x 16-bit data. Each device requires a single 3 volt power supply for both read and write functions.
Single power supply operation
3 volt read, erase, and program operations
Wide I/O voltage range (VIO): 1.8V to VCC
All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input.
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Uniform sector architecture
One thousand twenty four 128 Kbyte sectors
100,000 erase cycles per sector typical
20-year data retention typical
Organized as 64M x 32, user configurable as 2 ranks of 64M x 16
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