Model: W764M64V1-XBX 512MB (64Mx64) NOR Flash 3V Page Mode Memory
The W764M64V1-XBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. This device has a 64-bit wide data bus, one write enable per 16-bit data word and requires a single 3 volt power supply for both read and write functions.
Single power supply operation
3 Volt read, erase, and program operations
Wide I/O voltage range (VIO): 1.8V to VCC
All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input.
Separate 1024-byte One Time Program (OTP) array with two lockable regions
Uniform sector architecture
One thousand twenty four 128 Kbyte sectors
100,000 erase cycles per sector typical
20-year data retention typical
Commercial, industrial and military temperature ranges
Organized as 1 rank of 64M x 64 (512MB),
2 ranks of 64M x 64 (1GB)
110, 120 ns
32-byte page read buffer
15, 20 ns page read times
512-byte write buffer reduces overall programming time for multiple-word updates
179 BGA, 14mm x 17mm
Suspend and resume commands for program and erase operations
Data# polling and toggle bits provide status
CFI (Common Flash Interface) parameter table
Advanced Sector Protection (ASP)
Hardware reset input (RESET#) resets device
Status Register, data polling, and ready/busy pin methods to determine device status.
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