This part has been replaced by WEDPN16M64V-XB3X.

Docs & Specs

Application Note


Model:  WEDPN16M64V-XB2X
128MB 16Mx64 Synchronous DRAM (SDRAM)

The 128MByte (1Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip's 67,108,864-bit banks is organized as 8,192 rows by 512 columns by 16 bits.

Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-12 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.

The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4 or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence.


  • High Frequency:  100, 125, 133MHz
  • Package:  219 Plastic Ball Grid Array (PBGA), 21 x 21mm
  • Single 3.3V power supply
  • Fully Synchronous; all signals registered on positive edge of system clock cycle
  • Internal pipelined operation; column address can be changed every clock cycle
  • Internal banks for hiding row access/precharge
  • Programmable Burst length 1,2,4,8 or full page
  • 8,192 refresh cycles
  • Commercial, Industrial and Military Temperature Ranges
  • Organized as 16M x 64
    • User Configurable as 2x16Mx32 or 4x16Mx16
  • Weight: WEDPN16M64V-XB2X - 2 grams typical

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